Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
:VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAM...
Inchange Semiconductor
2SC3893A PDF File
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