INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3856-P
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=180V(Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
200 ...
