isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3841
DESCRIPTION ·High Current-Gain Bandwidth Product:
fT = 4 ...
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3841
DESCRIPTION ·High Current-Gain Bandwidth Product:
fT = 4 GHz TYP. ·Low Output Capacitance-
COB = 1.5 pF TYP. ·Low Base Time Constant:
rbb’ CC= 4.0 ps TYP. ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a
tuner of a TV receiver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
25
V
VCEO Collector-Emitter
Voltage
12
V
VEBO
Emitter-Base
Voltage
3
V
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
30
mA
0.2
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3841
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.1 μA
VCE(sat) Collector-Emitter Saturation
Voltage IC= 10mA ; IB= 1mA
0.5
V
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
40
200
fT
Current-Gain—Bandwidth Product
IE= -5mA;VCE= 10V
2.5 4.0
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; f= 1MHz
0.85 1.5 pF
rbb’ CC Base Time Constant
IE= -5mA ; VCE= 10V;f= 31.9MHz
4
10
ps
hFE Classification Class T62/P T63/Q
T64/R
Marking T62
T63
T64
hFE
40-80 60-120 100-200
N...
