INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3834Y
DESCRIPTION ·Low Collector ...
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3834Y
DESCRIPTION ·Low Collector Saturation
Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 120V (Min) ·Good Linearity of hFE
APPLICATIONS ·Designed for use in humidifier , DC/DC converter and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
200 V
VCEO
Collector-Emitter
Voltage
120 V
VEBO
Emitter-Base
Voltage
8V
IC Collector Current-Continuous 7 A
ICM Collector Current-Pulse
14 A
IB Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
3 50 150 -55~150
A W ℃ ℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3834Y
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation
Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 3A; IB= 0.3A
ICBO Collector Cutoff Current
VCB= 200V; IE= 0
IEBO Emitter Cutoff Current hFE DC Current Gain
VEB= 8V; IC= 0 IC= 3A ; VCE= 4V
fT Current-Gain—Bandwidth Product COB Output Capacitance Switching times
IE= -0.5A ; VCE= 12V IE= 0 ; VCB= 10V;ftest= 1.0MHz
ton Turn-on Time tstg Storage Time tf Fall Time
IC= 3A ;IB1=0.3A; IB2= -0.6A RL= 16.7Ω; VCC...