2SC3834Y

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3834Y DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Good Linearity of hFE APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 8V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse 14 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 3 50 150 -55~150 A W ℃ ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3834Y ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain VEB= 8V; IC= 0 IC= 3A ; VCE= 4V fT Current-Gain—Bandwidth Product COB Output Capacitance Switching times IE= -0.5A ; VCE= 12V IE= 0 ; VCB= 10V;ftest= 1.0MHz ton Turn-on Time tstg Storage Time tf Fall Time IC= 3A ;IB1=0.3A; IB2= -0.6A RL= 16.7Ω; VCC...