2SC3830
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) sAbsolute maxim...
2SC3830
Silicon NPN Triple Diffused Planar Transistor (High
Voltage and High Speed Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3830 600 500 10 6(Pulse12) 2 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 1max 100max 500min 10 to 30 0.5max 1.3max 8typ 45typ
(Ta=25°C) 2SC3830 Unit mA
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
µA
16.0±0.7
V V MHz pF
8.8±0.2
a b
ø3.75±0.2
12.0min
4.0max
V
1.35
0.65 +0.2 -0.1 2.5 B C E 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.2 IB2 (A) –0.4 ton (µs) 1max tstg (µs) 4.5max tf (µs) 0.5max
Weight : Approx 2.6g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
6
1A
80 0m A
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
Collector-Emitter Saturation
Voltage V CE(s a t) (V ) Base-Emitter Saturation
Voltage V B E (sa t) (V ) (I C /I B =5) 2
I C – V BE Temperature Characteristics (Typical)
6 (V CE =4V)
5 Collector Current I C (A)
60 0m A
5 Collector Current I C (A)
4
400 mA
4
300mA
3
V B E (sat) 1
p) –55˚C (Case Tem Temp)
ase Tem p)
3
mp
200mA
2
I B =100mA
emp se T
2
(Ca
(Ca 25˚C
12
V...