2SC3811

Transistors 2SC3811 Silicon NPN epitaxial planar type For high-speed switching ■ Features Low collector-emitter saturation voltage VCE(sat) 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit / Collector-base voltage (Emitter open) VCBO 40 V 0.45+–00..115 0.45+–00..115 e Collector-emitter voltage (E-B short) VCES 40 V c type) Emitter-base voltage (Collector open) VEBO 5 V n d ge. ed Collector current IC 100 mA 2.3±0.2 le sta ntinu Peak collector current ICP 300 mA a e cyc isco Collector power dissipation PC 400 mW life d, d Junction temperature Tj 150 °C n u duct type Storage temperature Tstg −55 to +150 °C 2.5+–00..26 2.5+–00..26 1 23 1: Emitter 2: Base 3: Collector TO-92-B1 Package inte ntins followlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 M is con inten Forward current transfer ratio * hFE VCE = 1 V, IC = 10 mA 60 /Dis ma Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA D ance type, Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA ten ce Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz ain nan Collector output capacitance M inte (Common base, input open circuite...