2SC3807

www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Package Dimensions unit:mm 2043A [2SC3807] Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C B : Base C : Collector E : Emitter SANYO : TO-126LP Conditions Ratings 30 25 15 2 4 1.2 15 150 –55 to +150 Unit V V V A A W W ˚C ˚C Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=5V, IC=1A VCE=10V, IC=50mA VCB=10V, f=1MHz 800 600 260 27 MHz pF 1500 Conditions Ratings min typ max 0.1 0.1 3200 Unit µA µA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other...