2SC3793
Silicon NPN Epitaxial
Application
UHF local oscillator
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2...
2SC3793
Silicon NPN Epitaxial
Application
UHF local oscillator
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SC3793
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 15 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown
voltage Collector to emitter breakdown
voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation
voltage Collector output capacitance Gain bandwidth product Note: Marking is “IP-”. Symbol V(BR)CBO V(BR)CEO I CBO I EBO hFE VCE(sat) Cob fT Min 20 15 — — 30 — — — Typ — — — — — — 0.7 2.9 Max — — 1 1 200 0.5 1 — V pF GHz Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VCB = 15 V, IE = 0 VEB = 3 V, IC = 0 VCE = 10 V, IC = 5 mA I C = 20 mA, IB = 4 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 10 V, IC = 5 mA
2
2SC3793
Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) 16 160 12 120 8 80 40 µA IB = 0 0 150 50 100 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emitter
Voltage VCE (V) 20 240 200
100
50
4
DC Current Transfer Ratio vs. Collector Current VCE = 10V DC Current Transfer ratio hFE 160 Collector Output Capacitance Cob...