2SC3779

Ordering number:ENN1954C NPN Epitaxial Planar Silicon Transistor 2SC3779 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications · UHF low-noise amplifiers, wide-band amplifiers. Features · Small noise figure : NF=1.5dB typ (f=0.9GHz). · High power gain : MAG=14dB typ (f=0.9GHz). · High cutoff frequency : fT=5GHz typ. Package Dimensions unit:mm 2004B [2SC3779] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C 1.3 1.3 Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Gain-Bandwidth Product fT Output Capacitance Cob Reverse Transfer Capacitance Cre * : The 2SC3779 is classified by 20mA hFE as follows : VCB=12V, IE=0 VEB=2V, IC=0 VCE=10V, IC=20mA VCE=10V, IC=20mA VCB=10V, f=1MHz VCB=10V, f=1MHz Rank C D hFE 40 to 80 60 to 120 E 100 to 200 1 : Base 2 : Emitter 3 : Collector SANYO : NP Ratings 20 12 3 100 40 600 150 –55 to +150 Unit V V V mA mA mW ˚C ˚C Ratings min typ max Unit 1.0 µA 10 µA 40* 200* 5.0 GHz 1.0 pF 0.7 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle a...