isc Silicon NPN Power Transistor
DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation Vol...
isc Silicon NPN Power Transistor
DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·Low Collector Saturation
Voltage ·Complement to Type 2SA1471 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Inductance, lamp drivers ·Inverters, converters ·Power
amplifiers ·High-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
80
V
VCEO Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Pulse
Collector Power Dissipation
@TC=25℃ PC
Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
12
A
30 W
2.0
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SC3748
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
2SC3748
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 1mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5A; IB= 0.25A
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 2V
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 5A , IB1= -IB...