isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Line...
isc Silicon NPN Power Transistor
DESCRIPTION ·Low Collector Saturation
Voltage-
: VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1451 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
60
V
VCEO
Collector-Emitter
Voltage
50
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
30
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3709
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 6A; IB= 0.3A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 6A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 1V
hFE-2
DC Current Gain
IC= 6A; VCE= 1V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IB1= -IB2= 0.3A, RL= 5Ω; VCC≈ 30V,
hFE-1 Classifications
...