2SC3708

Ordering number:ENN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features · Adoption of FBET process. · AF amp, AF power amp. · High breakdown voltage : VCEO>80V Package Dimensions unit:mm 2003B [2SA1450/2SC3708] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SA1450 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)60V, IE=0 Emitter Cutoff Current IEBO VEB=(–)4V, IC=0 DC Current Gain hFE1 hFE2 VCE=(–)5V, IC=(–)50mA VCE=(–)5V, IC=(–)400mA * : 2SA1450/2SC3708 are classified by 50mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 123 1.3 1.3 1 : Base 2 : Collector 3 : Emitter SANYO : NP Ratings (–)100 (–)80 (–)5 (–)500 (–)800 (–)100 600 150 –55 to +150 Unit V V V mA mA mA mW ˚C ˚C Ratings min typ max Unit (–)0.1 µA (–)0.1 µA 100* 400* 60 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other application...