2SC3691

isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2.5 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A VBE(sat) -1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.15A VBE(sat) -2 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A ICBO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 60V; IE= 0 VCE= 60V; VBE= -1.5V Ta=125℃ VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0...