2SC3685

Ordering number:EN1937A NPN Triple Diffused Planar Silicon Transistor 2SC3685 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Applications · Ultrahigh-definition color display horizontal deflection output. Package Dimensions unit:mm 2022A [2SC3685] Features · Fast speed (tf typ=100ns). · High breakdown voltage (VCBO=1500V). · High reliability (adoption of HVP process). · Adoption of MBIT process. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Conditions Ratings 1500 800 6 6 16 125 150 –55 to +150 Unit V V V A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector-to-Emitter Sastain Voltage Emitter Cutoff Current Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage DC Current Gain Storage Time Fall Time Symbol ICES VCE=1500V, RBE=0 VCEO(sus) IC=100mA, IB=0 IEBO VEB=4V, IC=0 VCE(sat) IC=4A, IB=1A VBE(sat) hFE tstg tf IC=4A, IB=1A VCE=5V, IC=1.0A IC=4A, IB1=0.8A, IB2=–1.6A IC=4A, IB1=0.8A, IB2=–1.6A 8 3.0 0.1 0.2 µs µs Conditions Ratings min 800 1.0 5 1.5 typ max 1.0 Unit mA V mA V V Any and all SANYO products described or contained herein do not have specifications that can handle appl...