2SC3679
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings
Symb...
2SC3679
Silicon NPN Triple Diffused Planar Transistor (High
Voltage Switching Transistor) sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3679 900 800 7 5(Pulse10) 2.5 100(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
2SC3679
Unit
µA µA
V V MHz pF
20.0min 19.9±0.3
4.0
a b
ø3.2±0.1
4.0max
V
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL (Ω) 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.3 IB2 (A) –1 ton (µs) 1max tstg (µs) 5max tf (µs) 1max
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
5
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
(I C /I B =5) Collector-Emitter Saturation
Voltage V CE(s a t) (V ) Base-Emitter Saturation
Voltage V B E (s a t) (V )
I C – V BE Temperature Characteristics (Typical)
5 (V C E =4V)
700mA
600mA
500mA
2
Collector Current I C (A)
300mA
3
Collector Current I C (A)
4
400 mA
4
3
mp)
Temp (Case 25˚C
200mA
)
e Te
2
I B =100mA
1
2
Te m p) 25˚ C –5 5 ˚C
1
1
V C E (...