2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=...
2SC3678
Silicon NPN Triple Diffused Planar Transistor (High
Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3678 900 800 7 3(Pulse6) 1.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C)
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ
External Dimensions MT-100(TO3P)
5.0±0.2 15.6±0.4 9.6 2.0 1.8 4.8±0.2 2.0±0.1
2SC3678
Unit
µA µA
19.9±0.3
V V V MHz pF
4.0
a b
ø3.2±0.1
20.0min
4.0max
2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL (Ω) 250 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.15 IB2 (A) –0.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max
5.45±0.1 B C E
5.45±0.1
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
3
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
(I C /I B =5) Collector-Emitter Saturation
Voltage V C E (sa t) (V ) Base-Emitter Saturation
Voltage V B E (s at) (V)
I C – V BE Temperature Characteristics (Typical)
3 (V CE =4V)
500mA
400mA
300mA
1
–55˚C (Case Tem
25˚C (Cas
V B E (sat)
p)
Collector Current I C (A)
2
200 mA
Collector Current I C (A)
e Temp)
Temp)
2
mp)
mp) 25˚C (C ase Te
2 5 Cas eT ˚C e m p)
–55...