isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3676
DESCRIPTION ·Low Collector Saturation Voltage ·High br...
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3676
DESCRIPTION ·Low Collector Saturation
Voltage ·High breakdown
voltage ·Small Cob ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High
voltage amplifier ·High-
voltage switching applications ·Dynamis focus applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
900
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
0.3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.0
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC3676
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 1mA ; IB= 0
900
V
VCE(sat) Collector-Emitter Saturation
Voltage IC=60mA; IB=12mA
5.0
V
VBE(sat) Base-Emitter Saturation
Voltage
IC= 60mA; IB= 12mA
2.0
V
ICBO
Collector Cutoff Current
VCB= 900V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
10
μA
hFE
DC Current Gain
IC= 30mA ; VCE= 5V
30
fT
Current-Gain—Bandwidth Product
IE=30mA ; VCE= 10V
6
MHz
COB
Output Capacitance
IE= 0 ; VCB= 100V;ftest= 1.0MHz
5.0
pF
NOTIC...