2SC3676

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3676 DESCRIPTION ·Low Collector Saturation Voltage ·High breakdown voltage ·Small Cob ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage amplifier ·High-voltage switching applications ·Dynamis focus applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 900 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.3 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.0 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3676 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC=60mA; IB=12mA 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 60mA; IB= 12mA 2.0 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 30mA ; VCE= 5V 30 fT Current-Gain—Bandwidth Product IE=30mA ; VCE= 10V 6 MHz COB Output Capacitance IE= 0 ; VCB= 100V;ftest= 1.0MHz 5.0 pF NOTIC...