TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3670
Strobe Flash Applications Medium Power Amplifier App...
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3670
Strobe Flash Applications Medium Power Amplifier Applications
2SC3670
Unit: mm
High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A)
Low saturation
voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC
Pulsed (Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCES VCEO VEBO
IC
ICP
IB PC Tj Tstg
30 30 10 6 2
5
0.5 1000 150 −55 to 150
V V V
A
A mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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