SMD Type
High-Voltage Switching Applications 2SC3646
Transistors
Features
Adoption of FBET, MBIT Processes High Breakd...
SMD Type
High-
Voltage Switching Applications 2SC3646
Transistors
Features
Adoption of FBET, MBIT Processes High Breakdown
Voltage and Large Current Capacity Fast Switching Time
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm)
2
Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg
Rating 120 100 6 1 2 500 1.3 150 -55 to +150
Unit V V V A A mW W
Electrical Characteristics Ta = 25
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage DC Current Gain Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = 100V , IE = 0 VEB = 4V , IC = 0 120 100 6 100 0.2 0.85 120 13 80 See Test Circuit. 700 40 ns 400 0.6 1.2 V V MHz pF Min Typ Max 100 100 Unit nA nA V V V
V(BR)CBO IC = 10uA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10uA , IC = 0 hFE VCE = 5V , IC = 100mA
VCE(sat) IC = 400mA , IB = 40mA VBE(sat) IC = 400mA , IB = 40mA fT Cob ton tstg tf VCE = 10V , IC = 100mA VCB = 10V , IE = 0 , f = 1MHz
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Free Datasheet http://www.datasheet4u.com/
SMD Type
2SC3646
Test Circuit
Transistors
hFE Classific...