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2SC3632-Z

Part Number	2SC3632-Z
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3632-Z DESCRIPTION ·With TO-252(DPAK) packaging ·High colle...
Datasheet	2SC3632-Z PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC3632-Z DESCRIPTION ·With TO-252(DPAK) packaging ·High collector-emitter voltage ·Low collector saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High voltage switching.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation TJ Junction Temperature 1 A 2.
0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered tra...

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