DATA SHEET
SILICON TRANSISTORS
2SC3623, 3623A
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SW...
DATA SHEET
SILICON TRANSISTORS
2SC3623, 3623A
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER
AMPLIFIERS AND SWITCHING
FEATURES High hFE:
hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA Low VCE(sat):
VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA High VEBO:
VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC(DC) PT
Tj Tstg
Ratings 2SC3623 2SC3623A
60 50 12 15 150 250 150 −55 to +150
Unit
V V V mA mW °C °C
PACKAGE DRAWING (UNIT: mm)
Electrode connection 1. Emitter (E) 2. Collector (C) 3. Base (B)
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Document No. D13521EJ4V0DS00 Date Published April 2002 N CP(K) Printed in Japan
©
21090928
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO VCB = 50 V, IE = 0
Emitter cutoff current
IEBO VEB = 10 V, IC = 0
DC current gain
hFE1 VCE = 5.0 V, IC = 1.0 mA*
DC current gain
hFE2 VCE = 5.0 V, IC = 100 mA*
DC base
voltage
VBE VCE = 5.0 V, IC = 1.0 mA*
Collector saturation
voltage VCE(sat) IC = 50 mA, IB = ...