DATA SHEET
SILICON TRANSISTOR
2SC3603
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3...
DATA SHEET
SILICON TRANSISTOR
2SC3603
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
3.8 MIN.
FEATURES
Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz High power gain : GA = 10 dB TYP. @ f = 2.0 GHz
C
3.8 MIN.
3.8 MIN. B
PARAMETER Collector to Base
Voltage Collector to Emitter
Voltage Emitter to Base
Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
SYMBOL VCBO VCEO VEBO IC PT (TC = 25 °C) Tj Tstg
RATING 20 12 3 100 580 200 -65 to +150
UNIT V V V mA mW °C °C
E
PIN CONNECTIONS E: Emitter C: Collector 0.5 ± 0.05 B: Base 2.55 ± 0.2
φ 2.1
1.8 MAX. 0.55
3.8 MIN.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
45 °
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Reverse Transfer Capacitance Noise Figure Insertion Gain Maximum Available Gain Power Gain SYMBOL ICBO IEBO hFE fT Cre NFNote |S21e|2 MAG GA TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA Pulse VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 7 mA, f = 2 GHz VCE = 10 V, IC = 20 mA, f = 2 GHz VCE = 10 V, IC = 20 mA, f = 2 GHz VCE = 10 V, IC = 7 mA, f = 2 GHz 7.0 10.0 5...