2SC3588

isc Silicon NPN Power Transistor 2SC3588 DESCRIPTION ·Low Collector Saturation Voltage- VCE(sat)= 0.5V(Max)@ IC= 300mA ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 400V(Min) ·Complement to Type 2SA1400 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high Voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 2 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 300mA; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 300mA; IB= 60mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 50mA ; VCE= 5V hFE-2 DC Current Gain IC= 0.3A ; VCE= 5V  hFE Classifications M L 20-40 30-60 K 40-80 2SC3588 MIN TYP. MAX UNIT 400 V 0.5 V 1.0 V 10 μA 10 μA 20 80 10 NOTICE： ISC reserves the rights to make changes of t...