DatasheetsPDF.com

2SC3582 Datasheet

Part Number 2SC3582
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN RF Transistor
Datasheet 2SC3582 Datasheet2SC3582 Datasheet (PDF)

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.

  2SC3582   2SC3582






Part Number 2SC3582
Manufacturers NEC
Logo NEC
Description NPN Silicon Transistor
Datasheet 2SC3582 Datasheet2SC3582 Datasheet (PDF)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabricati.

  2SC3582   2SC3582







Silicon NPN RF Transistor

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 DESCRIPTION ·Low Noise Figure, High Gain, and High Current Capability Achieve a Very Wide Dynamic Range and Excellent Linearity. ·Low Noise and High Gain NF = 1.2 dB TYP. @f = 1.0 GHz Ga = 12 dB TYP. @f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low-noise and small signal amplifiers from VHF ~ UHF band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 65 mA 0.6 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3582 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 8V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V Cre Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 8V;f= 1.0GHz MAG Maximum Available Gain IC= 20mA ; VCE= 8V;f= 1.0GHz NF Noise Figure IC= 7mA ; VCE= 8V;f= 1.0GHz MIN TYP. MAX UNIT 1.0 μA 1.0 μA 50 250 8 GHz 0.4 0.9 .


2016-06-23 : SGR282Z    DM74LS166    CD11GHS    CD11GH    TS13D-CD11GH    CD11GH    LTPL-C034UVH405    LTPL-C034UVH385    LTPL-C034UVH365    HM9270   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)