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2SC3576

Part Number	2SC3576
Manufacturer	Sanyo Semicon Device
Description	NPN Epitaxial Planar Silicon Transistor
Published	Mar 22, 2005
Datasheet	2SC3576 PDF File

Features

· Adoption of FBET process.· High DC current gain (hFE=800 to 3200).· Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).· High VEBO (VEBO≥15V).

Package Dimensions
unit:mm 2033
[2SC3576]

Specifications

Absolute Maximum Ratings at Ta = ...

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