Transistor
2SC3526(H)
Silicon NPN epitaxial planer type
For display video output
Unit: mm
5.9± 0.2 4.9± 0.2
q q q
2.5...
Transistor
2SC3526(H)
Silicon NPN epitaxial planer type
For display video output
Unit: mm
5.9± 0.2 4.9± 0.2
q q q
2.54± 0.15
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*R EB = 470Ω
(Ta=25˚C)
Ratings 110 100 50 3.5 300 150 1.0 150 –55 ~ +150 Unit V V V V mA mA W ˚C ˚C
0.45–0.1 1.27
+0.2
Symbol VCBO VCER* VCEO VEBO ICP IC PC Tj Tstg
13.5± 0.5
0.7–0.2
+0.3
High transition frequency fT. Small collector output capacitance Cob. Wide current range.
0.7± 0.1
8.6± 0.2
s Features
0.45–0.1 1.27
+0.2
s Electrical Characteristics
Parameter Collector cutoff current Collector to base
voltage Collector to emitter
voltage Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Transition frequency Collector output capacitance
*
(Ta=25˚C)
Symbol ICEO VCBO VCER VCEO VEBO hFE VCE(sat) fT1 fT2 Cob Conditions VCE = 35V, IB = 0 IC = 100µA, IE = 0 IC = 500µA, RBE = 470Ω IC = 1mA, IB = 0 IE = 100µA, IC = 0 VCE = 5V, IC = 100mA* IC = 150mA, IB = 15mA* VCB = 10V, IE = –10mA, f = 200MHz VCB = 10V, IE = –110mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz 300 350 3 110 100 50 3.5 20 0.5 V MHz MHz pF min typ max 10 Unit µA V V V V
Pulse measurement
3.2
1
2
3
1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package
...