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2SC3510 Datasheet

Part Number 2SC3510
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3510 Datasheet2SC3510 Datasheet (PDF)

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC31.

  2SC3510   2SC3510






Part Number 2SC3519B
Manufacturers NELL SEMICONDUCTOR
Logo NELL SEMICONDUCTOR
Description Silicon NPN Transistor
Datasheet 2SC3510 Datasheet2SC3519B Datasheet (PDF)

SEMICONDUCTOR 2SC3519B Series Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386B) 15A/160V, 180V/130W RoHS RoHS Nell High Power Products 2.0 19.9±0.3 4.0 20.0 min 4.0 max TO-3P(B) FEATURES Recommend for 105W high Fiderity audio frequency amplifier output stage Complement to type 2SA1386B & 2SA1386B-A 2 3 +0.2 1.05 -0.1 5.45±0.1 C E +0.2 0.65 -0.1 5.45±0.1 B 1.8 15.6±0.4 9.6 5 . 0 ±0 . 2 4.8±0.2 2.0±0.1 Φ 3.2 ± 0,1 1.4 C 1 2 3 B APPLICATIONS Audio and gener.

  2SC3510   2SC3510







Part Number 2SC3519A
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3510 Datasheet2SC3519A Datasheet (PDF)

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SC3519 160 VCBO Collector-Base Voltage V 2SC3519A 180 2SC3519 160 VCEO Collector-Emit.

  2SC3510   2SC3510







Part Number 2SC3519A
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3510 Datasheet2SC3519A Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3519 2SC3519A DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1386/A APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SC3519 VCBO Collector-base voltage 2SC3519A 2SC3519 VCEO Collector-emitter voltage 2SC3519A VEBO IC IB PC .

  2SC3510   2SC3510







Part Number 2SC3519A
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon NPN Transistor
Datasheet 2SC3510 Datasheet2SC3519A Datasheet (PDF)

VCEO = 180 V, IC = 15 A Silicon NPN Epitaxial Planar Transistor 2SC3519A Data Sheet Description Package The 2SC3519A is an NPN transistor of 180 V, 15 A. The product has constant hFE characteristics in a wide current range, providing high-quality audio sounds. TO3P-3L (4) Features ● Complementary to 2SA1386A ● LAPT (Linear Amplifier Power Transistor) ● High Transition Frequency ● Bare Lead Frame: Pb-free (RoHS Compliant) ● VCEO----------------------------------------------------- 180 V ● .

  2SC3510   2SC3510







Part Number 2SC3519
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3510 Datasheet2SC3519 Datasheet (PDF)

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3519 = 180V(Min)-2SC3519A ·Good Linearity of hFE ·Complement to Type 2SA1386/A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 2SC3519 160 VCBO Collector-Base Voltage V 2SC3519A 180 2SC3519 160 VCEO Collector-Emit.

  2SC3510   2SC3510







Silicon NPN Transistor

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC3127 * 1 20 12 3 50 150 150 –55 to +150 2SC3128 20 12 3 50 350 150 –55 to +150 2SC3510 20 12 3 50 600 150 –55 to +150 Unit V V V mA mW °C °C 1. Marking for 2SC3127 is “ID–”. 2 2SC3127, 2SC3128, 2SC3510 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.5 — — Typ — — — — 90 0.9 4.5 10.5 2.2 Max — — 10 0.5 200 1.5 — — — pF GHz dB dB Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 600 2SC3510 400 2SC3128 DC Current Transfer Ratio .


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