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2SC3458 Datasheet

Part Number 2SC3458
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3458 Datasheet2SC3458 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuo.

  2SC3458   2SC3458






Part Number 2SC3458
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Type Silicon Transistor
Datasheet 2SC3458 Datasheet2SC3458 Datasheet (PDF)

Ordering number:EN1589C NPN Triple Diffused Planar Type Silicon Transistor 2SC3458 800V/3A Switching Regulator Applications Features · High breakdown voltage and high reliability. · Fast switching speed (tf : 0.1µs typ). · Wide ASO. · Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3458] Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Volta.

  2SC3458   2SC3458







Part Number 2SC3458
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3458 Datasheet2SC3458 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3458 DESCRIPTION ·With TO-3PN package ·High breakdown voltage and high reliability. ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·800V/3A Switching Regulator Applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAME.

  2SC3458   2SC3458







NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3458 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3458 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A; IB1= -IB2= 0.3A; L= 2mH; clamped 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE=0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hF.


2020-09-20 : 2SC3300    2SC3307    2SC3253    2SC3211    2SC3182    2SC3180    2SC3179    2SC3171    2SC3159    2SC3158   


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