isc Silicon NPN Power Transistor
2SC3446
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min) ...
isc Silicon NPN Power Transistor
2SC3446
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
800
V
VCEO
Collector-Emitter
Voltage
500
V
VEBO
Emitter-Base
voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1
A
40
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown
Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown
Voltage IC= 5mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 1m A; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 5V
hFE-2
DC Current Gain
IC= 1.5A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.3A; VCE= 10V
COB
...