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2SC3437 Datasheet

Part Number 2SC3437
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3437 Datasheet2SC3437 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications 2SC3437 Unit: mm • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector c.

  2SC3437   2SC3437






Part Number 2SC3437
Manufacturers Jin Yu Semiconductor
Logo Jin Yu Semiconductor
Description TRANSISTOR
Datasheet 2SC3437 Datasheet2SC3437 Datasheet (PDF)

2SC 3437 TRANSISTOR (NPN) SOT–23 FEATURES  High Transition Frequency  Low Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 40 15 5 200 150 833 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECT.

  2SC3437   2SC3437







Part Number 2SC3437
Manufacturers Kexin
Logo Kexin
Description Silicon NPN Epitaxial Transistor
Datasheet 2SC3437 Datasheet2SC3437 Datasheet (PDF)

SMD Type Silicon NPN Epitaxial 2SC3437 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm High transition frequency: fT = 400 MHz (typ). +0.1 2.4-0.1 Low saturation voltage: VCE (sat) = 0.3 V (max). High speed switching time: tstg = 15 ns (typ). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltag.

  2SC3437   2SC3437







Part Number 2SC3437
Manufacturers SeCoS
Logo SeCoS
Description NPN Plastic-Encapsulate Transistor
Datasheet 2SC3437 Datasheet2SC3437 Datasheet (PDF)

Elektronische Bauelemente 2SC3437 0.2A , 40V NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE  High Transition Frequency.  Low Saturation Voltage CLASSIFICATION OF hFE (1) Product-Rank 2SC3437-R 2SC3437-O Range 40~80 70~140 Marking CHR CHO 2SC3437-Y 120~240 CHY PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.

  2SC3437   2SC3437







Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Switching Applications Computer, Counter Applications 2SC3437 Unit: mm • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: VCE (sat) = 0.3 V (max) • High speed switching time: tstg = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 200 mA Base current IB 40 mA Collector power dissipation PC 150 mW Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C JEDEC TO-236MOD JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-3F1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.012 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitt.


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


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