TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3423
Audio Frequency Amplifier Applications
2SC3423
Unit...
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3423
Audio Frequency Amplifier Applications
2SC3423
Unit: mm
Complementary to 2SA1360 Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
150 150
5 50 5 1.2 5 150 −55 to 150
V V V mA mA
W
°C °C
JEDEC JEITA
― ―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-8H1A
temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 0.82 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage Base-e...