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2SC3421 Datasheet

Part Number 2SC3421
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3421 Datasheet2SC3421 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3421 Audio Frequency Power Amplifier Applications 2SC3421 Unit: mm • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Stor.

  2SC3421   2SC3421






Part Number 2SC3421
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet 2SC3421 Datasheet2SC3421 Datasheet (PDF)

isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Suitable for driver of 60 to 80 Watts audio amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 1.

  2SC3421   2SC3421







Part Number 2SC3421
Manufacturers BLUE ROCKET ELECTRONICS
Logo BLUE ROCKET ELECTRONICS
Description Silicon NPN transistor
Datasheet 2SC3421 Datasheet2SC3421 Datasheet (PDF)

2SC3421 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features VCEO, 60-80W , 2SA1358 。 High VCEO, suitable for driver of 60 to 80 watts audio amplifier, complementary to 2SA1358. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Collector PIN 3:Base / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 80~160 Y 120~240 ht.

  2SC3421   2SC3421







Part Number 2SC3421
Manufacturers JCET
Logo JCET
Description NPN Transistor
Datasheet 2SC3421 Datasheet2SC3421 Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3421 TRANSISTOR (NPN) FEATURES z Complementary to 2SA1358 z Suitable for Driver of 60 to 80 Watts Audio Amplifier z High Breakdown Voltage TO- 126C 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS* Ta=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current Collector Dissipati.

  2SC3421   2SC3421







Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3421 Audio Frequency Power Amplifier Applications 2SC3421 Unit: mm • Complementary to 2SA1358 • Suitable for driver of 60 to 80 watts audio amplifier • High breakdown voltage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 120 120 5 1 100 1.5 10 150 −55 to 150 V V V A mA W °C °C JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-8H1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.82 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturati.


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


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