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2SC3419
Silicon NPN Transistor
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. 2SC3419 Unit: mm Low saturation
voltage
: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA) High collector power dissipation: PC = 1.2 W (Ta = 25°C) Complementary to 2SA1356 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating ...
Toshiba Semiconductor
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