2SC3413

2SC3413 Silicon NPN Epitaxial Application Low frequency low noise amplifier HF amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SC3413 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 40 30 5 100 300 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure Note: B 100 to 200 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob NF 1 Min 40 30 5 — — 100 — — — — — Typ — — — — — — — — 200 — 1.0 Max — — — 0.5 0.5 500 0.75 0.2 — 3.5 5.0 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA V V MHz pF dB VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, Rg = 1 kΩ, f = 1 kHz 1. The 2SC3413 is grouped by h FE as follows. C 160 to 320 D 250 to 500 See characteristic curves of 2SC458(LG). 2 2SC3413 Maximum Collector Dissipation Curve Colle...