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2SC3405

Toshiba Semiconductor

Silicon NPN Triple Diffused Type TRANSISTOR

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 2SC3405 Switching Regulator and High Voltage Switching App...


Toshiba Semiconductor

2SC3405

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3405 2SC3405 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications Industrial Applications Unit: mm Excellent switching times: tr = 1.0 μs (max) tf = 1.0 μs (max), (IC = 0.3 A) High collector breakdown voltage: VCEO = 800 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 8 V Collector current DC Pulse IC 0.8 A ICP 1.5 Base current IB 0.2 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 20 JEDEC JEITA ― ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C TOSHIBA 2-7J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-05 Electrical Characteristics (Ta = 25°C) 2SC3405 Characteristics Collector cut-off cur...




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