Ordering number:EN1392A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1339/2SC3393
High-Speed Switching Applications...
Ordering number:EN1392A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1339/2SC3393
High-Speed Switching Applications
Features
· Very small-sized package permitting sets to be smallsized, slim. · High breakdown
voltage : VCEO=(–)50V. · Complementary pair transistor having large current capacity and high fT. · Adoption of FBET process. Switching Time Test Circuit
Package Dimensions
unit:mm 2033
[2SA1339/2SC3393]
( ) : 2SA1339
(For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)
B : Base C : Collector E : Emitter SANYO : SPA
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
Ratings (–)60 (–)50 (–)5 (–)500 (–)800 300 150 –55 to +150
Unit V V V mA mA mW
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance Collector-to-Emitter Saturation
Voltage Base-to-Emitter Saturation
Voltage Collector-to-Base Breakdown
Voltage Collector-to-Emitter Breakdown
Voltage Emitter-to-Base Breakdown
Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)10mA VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz IC=(–)100mA, IB=(–)10mA 100* 3...