2SC3365

2SC3365 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-3P ADE-208-892 (Z) 1st. Edition September 2000 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Free Datasheet http://www.datasheet4u.com/ 2SC3365 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) IB PC * 1 Tj Tstg Ratings Unit 500 V 400 V 10 V 10 A 20 A 5 A 80 W 150 °C –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol Min VCEO(sus) VCEX(sus) 400 400 Typ — — Emitter to base breakdown V(BR)EBO 10 — voltage Collector cutoff current I CBO — — I CEO — — DC current transfer ratio hFE1 12 — hFE2 5 — Collector to emitter saturation VCE(sat) — — voltage Base to emitter saturation VBE(sat) — — voltage Turn on time Storage time Fall time Note: 1. Pulse test t on — — t stg — — tf — — Max Unit — V — V — V 50 µA 50 µA — — 1.0 V 1.5 V 1.0 µs 2.5 µs 1.0 µs Test conditions IC = 0.2 A, RBE = ∞, L = 100 mH IC = 10 A, IB1 = 2 A, IB2 = –0.6 A, VBE = –5.0 V, L = 180 µH, Clamped IE = 10 mA, IC = 0 VCB = 400 V, IE = 0 VCE = 350 V, RBE = ∞ VCE = 5.0 V, IC = 5 A*1 VCE = 5.0 V, IC = 10 A*1 IC = 5 A, IB =...