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2SC3356 Datasheet

Part Number 2SC3356
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Transistor
Datasheet 2SC3356 Datasheet2SC3356 Datasheet (PDF)

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 .

  2SC3356   2SC3356






Part Number 2SC3356
Manufacturers UTC
Logo UTC
Description NPN SILICON TRANSISTOR
Datasheet 2SC3356 Datasheet2SC3356 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3  DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors). 12 SOT-23-3 (JEDEC TO-236) 12 SOT-23 (EIAJ SC-59)  FEATURES * Low Noise and High Gain * High Power G.

  2SC3356   2SC3356







Part Number 2SC3356
Manufacturers SeCoS
Logo SeCoS
Description NPN Transistor
Datasheet 2SC3356 Datasheet2SC3356 Datasheet (PDF)

Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES  Low Noise Amplifier at VHF, UHF and CATV band  Low Noise and High Gain  High Power Gain Collector  SOT-23 A L 3 Top View CB 12 KE 1 3 2  Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) F REF. A B C D E F PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltag.

  2SC3356   2SC3356







Part Number 2SC3356
Manufacturers Renesas
Logo Renesas
Description NPN Silicon RF Transistor
Datasheet 2SC3356 Datasheet2SC3356 Datasheet (PDF)

PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold Jun 28, 2011 FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantity 3-pin Minimold.

  2SC3356   2SC3356







Part Number 2SC3356
Manufacturers Kexin
Logo Kexin
Description NPN Transistor
Datasheet 2SC3356 Datasheet2SC3356 Datasheet (PDF)

SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.1 1.3-0.1 Low noise and high gain. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector t.

  2SC3356   2SC3356







Part Number 2SC3356
Manufacturers NEC
Logo NEC
Description NPN Silicon Transistor
Datasheet 2SC3356 Datasheet2SC3356 Datasheet (PDF)

DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 0.4 −0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 −0.15 +0.1 FEATURES • Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High P.

  2SC3356   2SC3356







Silicon NPN Transistor

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz ·High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.1 A 0.2 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC3356 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 1V; IC= 0 hFE DC Current Gain IC= 20mA ; VCE= 10V fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V Cre Feed-Back Capacitance ︱S21e︱2 Insertion Power Gain IE= 0 ; VCB= 10V;f= 1.0MHz IC= 20mA ; VCE= 10V;f= 1.0GHz NF Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz MIN TYP. MAX UNIT 1.0 μA 1.0 μA 50 300 7 GHz 0.55 1.0 pF 11.5 dB 1.1 2.0 dB  hFE Classification Class Q R S Marking R23 R24 R25 hFE 50-100 80-160 125-250 isc website:www.i.


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