2SC3346

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SA1329 ·High speed switching time : tstg=1.0µs(Typ.) ·Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A 2SC3346 APPLICATIONS ·For high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 6 12 2 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ; IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=80V ;IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 70 40 80 MIN 80 0.2 0.9 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB 2SC3346 TYP. MAX UNIT V 0.4 1.2 10 10 240 V V µA µA MHz pF 220 Switching times Ton tstg tf Turn-on time Storag...