TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3334
2SC3334
High-Voltage Switching Applications ...
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC3334
2SC3334
High-
Voltage Switching Applications Color TV Chroma Output Applications
Unit: mm
High breakdown
voltage: VCEO = 250 V Low Cre: 1.8 pF (max) Complementary to 2SA1321
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
250 250
5 50 100 20 0.9 150 −55 to 150
V V V
mA
mA W °C °C
JEDEC JEITA TOSHIBA
TO-92MOD ―
2-5J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/
voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-09
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage DC current gain Collector-emitter saturation volta...
