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2SC3328

Toshiba Semiconductor

NPN TRANSISTOR


Description
2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SA1315 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emi...



Toshiba Semiconductor

2SC3328

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