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2SC3293

Sanyo Semicon Device

NPN Transistor

Ordering number:EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications · Suitable f...


Sanyo Semicon Device

2SC3293

File Download Download 2SC3293 Datasheet


Description
Ordering number:EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications · Suitable for use in switching of L load (motor drivers, printer hammer drivers, relay drivers). Package Dimensions unit:mm 2010C Features · High DC current gain. · Large current capacity and wide ASO. · On-chip Zener diode of 60±10V between collector and base. · Uniformity in collector-to-base breakdown voltage due to the adoption of an accurate impurity diffusion process. · High inductive load handling capability. Specifications [2SC3293] JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature * : With Zener diode (60±10V) Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚C Conditions Ratings 50* 50* 6 2 4 0.4 20 150 –55 to +150 Unit V V V A A A W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=40V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1A VCE=5V, IC=1A IC=1A, IB=4mA IC=1A, IB=4mA Conditions Ratings min typ 1000 4000 180 1.0 max 10 2 1.5 2.0 Unit µA mA MHz V V Any and all SANYO products de...




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