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2SC3272 Datasheet

Part Number 2SC3272
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3272 Datasheet2SC3272 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3272 DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For power amplification PINNING see Fig.2 PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction te.

  2SC3272   2SC3272






Part Number 2SC3272
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3272 Datasheet2SC3272 Datasheet (PDF)

isc Silicon NPN Power Transistor 2SC3272 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV chroma output and video signal amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-.

  2SC3272   2SC3272







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3272 DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For power amplification PINNING see Fig.2 PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 300 300 5 0.1 0.2 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector cut-off current Emitter cut-off current Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=5m A IC=10µA;IE=0 IC=1mA; IB=0 IE=10µA; IC=0 IC=10mA ; VCE=10V VCB=200V; IE=0 VEB=4V; IC=0 IE=0; VCB=30V;f=1MHz IC=10mA ; VCB=30V 50 300 300 5 39 MIN 2SC3272 SYMBOL VCEsat V(BR)CBO V(BR)CEO V(BR)EBO hFE ICBO IEBO COB fT TYP. MAX 2.0 UNIT V V V V 180 0.5 0.5 3 µA µA pF MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3272 Fig.2 outline dimensions 3 .


2009-03-23 : BB505G    BB505B    LY2N-DC12    LY2N    IEC947-5-1    2SC4460    3AN80FI    K1542    CS48DV2B    AOU1N60   


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