TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3268
2SC3268
VHF~UHF Band Low Noise Amplifier Applications
Un...
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3268
2SC3268
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) · NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Base current Collector current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IB IC PC PC (Note 1)
17 12 3 30 70 300
800
V V V mA mA mW
mW
Junction temperature Storage temperature range
Tj 125 °C
Tstg
-55~150
°C
Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 mmt
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-5K1A
Weight: 0.052 g (typ.)
Characteristics Transition frequency Insertion gain
Noise figure
Symbol
Test Condition
fT ïS21eï2 (1) ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz
Min Typ. Max Unit
¾ 5 ¾ GHz
¾ 15.0 ¾ ¾ 9.5 ¾
dB
¾ 1.7 ¾ dB
¾ 2.0 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance
ICBO IEBO hFE Cob Cre
VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
¾ ¾ 25 ¾ ¾
¾ ¾ ¾ 1.05 0....