2SC3268

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3268 2SC3268 VHF~UHF Band Low Noise Amplifier Applications Unit: mm · NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz) · NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Collector power dissipation VCBO VCEO VEBO IB IC PC PC (Note 1) 17 12 3 30 70 300 800 V V V mA mA mW mW Junction temperature Storage temperature range Tj 125 °C Tstg -55~150 °C Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 mmt Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-5K1A Weight: 0.052 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit ¾ 5 ¾ GHz ¾ 15.0 ¾ ¾ 9.5 ¾ dB ¾ 1.7 ¾ dB ¾ 2.0 ¾ Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance ICBO IEBO hFE Cob Cre VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1 MHz (Note 2) ¾ ¾ 25 ¾ ¾ ¾ ¾ ¾ 1.05 0....