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2SC3255 Datasheet

Part Number 2SC3255
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3255 Datasheet2SC3255 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3255 DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1291 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifier ·Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo.

  2SC3255   2SC3255






Part Number 2SC3255
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SC3255 Datasheet2SC3255 Datasheet (PDF)

Ordering number:ENN1201D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Applications · Various inductance lamp drivers for electrical equipment. · Inverters, converters (strobo, flash, fluorescent lamp lighting circuit). · Power amp (high power car stereo, motor controller). · High-speed switching (switching regulator, driver). Package Dimensions unit:mm 2010C [2SA1291/2SC3255] 10.2 3.6 5.1 4.5 1.3 2.7 6.3 15.1 Features · Low sat.

  2SC3255   2SC3255







Part Number 2SC3255
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3255 Datasheet2SC3255 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3255 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1291 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications ·Power amplifications ·Invertrers ,converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-b.

  2SC3255   2SC3255







NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3255 DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SA1291 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Various inductance lamp drivers for electrical equipment ·Inverters, converters ·Power amplifier ·Switching regulator, dirver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3255 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 2V fT Current-Gain—Bandwidth Product IC=1A ; VCE= 5V Switching times ton Turn-on Time tstg St.


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