SMD Type
NPN Silicon Triple Diffused 2SC3233
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
...
SMD Type
NPN Silicon Triple Diffused 2SC3233
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm
+0.1 2.30-0.1 +0.8 0.50-0.7
Features
Excellent Switching Times
+0.2 9.70 -0.2
+0.15 6.50-0.15 +0.2 5.30-0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
High colletor Breakdown
Voltage: VCEO=400V
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Base Current Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating 500 400 7 2 0.5 1 20 150 -55 to +150 Unit V V V A A W W
Electrical Characteristics Ta = 25
Parameter collector cutoff current emitter cutoff current Emitter-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage DC current Gain Collector-Emitter Saturation
Voltage Base- Emitter
Voltage Switching time turn-0n time Symbol ICBO IEBO V(BR)EBO V(BR)CEO hFE VCE(sat) VBE(sat) tr Testconditons VCB=400V,IE=0 VEB=7V,IC=0 IE=1mA,IC=0 IC=10mA,IB=0 VCE=5V,IC=0.1A VCE=5V,IC=1A IC=0.1A,IB=0.2A IC=0.1A,IB=0.2A 500 400 20 8 1 1.5 1.0 V V ìs Min Typ Max 100 1 Unit ìA mA V V
Switching storage time
tstg
2.5
tf Switching fall time
1
3 .8 0
tr=1.0ìs (Max.) tf=1.0ìs (Max.) at IC=0.8A
ìs
ìs
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1
Free Datasheet http://www.datasheet4u.com/
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