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2SC3223 Datasheet

Part Number 2SC3223
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3223 Datasheet2SC3223 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3223 DESCRIPTION ·With TO-3 package ·High speed,high current ·Low saturation voltage APPLICATIONS ·For high current high speed,high power applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter.

  2SC3223   2SC3223






Part Number 2SC3223
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3223 Datasheet2SC3223 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@IC= 10A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power supply and general purpose power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 7 V IC Collecto.

  2SC3223   2SC3223







SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3223 DESCRIPTION ·With TO-3 package ·High speed,high current ·Low saturation voltage APPLICATIONS ·For high current high speed,high power applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb=25 Open emitter Open base Open collector CONDITIONS MAX 230 200 7 20 7 200 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 0.62 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.2A ; IB=0 IC=10A; IB=1A IC=10A; IB=1A At rated voltage At rated voltage At rated voltage IC=20A ; VCE=2V IC=2A ; VCE=10V 10 MIN 200 2SC3223 SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT TYP. MAX UNIT V 1.0 1.5 0.1 0.1 0.1 V V mA mA mA 20 MHz 2 Sava.


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