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2SC3176 Datasheet

Part Number 2SC3176
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Epitaxial Planar Silicon Transistor
Datasheet 2SC3176 Datasheet2SC3176 Datasheet (PDF)

Ordering number:EN1312B NPN Epitaxial Planar Silicon Transistor 2SC3176 CRT Horizontal Deflection Output Applications (with Damper Diode) Features · Fast switching speed. · Especially suited for use in high-definition CRT display (VCC=12 to 24V). · Wide ASO. Package Dimensions unit:mm 2010C [2SC3176] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-.

  2SC3176   2SC3176






Part Number 2SC3179
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3176 Datasheet2SC3179 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A ·Complement to Type 2SA1262 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emit.

  2SC3176   2SC3176







Part Number 2SC3179
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3176 Datasheet2SC3179 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3179 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1262 ·Low collector saturation voltage APPLICATIONS ·Audio and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emit.

  2SC3176   2SC3176







Part Number 2SC3179
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon NPN Transistor
Datasheet 2SC3176 Datasheet2SC3179 Datasheet (PDF)

2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3179 80 60 6 4 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2.5 B C E Application : Audio and General Purpose (Ta=25°C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=1V IC=2A, IB=0.2A VCE=12V, IE=–0.2A VCB=10V, f=1MHz 100max 100max 60min 40min 0.6max 15typ.

  2SC3176   2SC3176







Part Number 2SC3178
Manufacturers Fujitsu Media Devices
Logo Fujitsu Media Devices
Description (2SC3178 / 2SC3059 - 2SC3061) Silicon High Speed Power Transistor
Datasheet 2SC3176 Datasheet2SC3178 Datasheet (PDF)

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res.

  2SC3176   2SC3176







Part Number 2SC3178
Manufacturers ETC
Logo ETC
Description NPN Transistor
Datasheet 2SC3176 Datasheet2SC3178 Datasheet (PDF)

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  2SC3176   2SC3176







NPN Epitaxial Planar Silicon Transistor

Ordering number:EN1312B NPN Epitaxial Planar Silicon Transistor 2SC3176 CRT Horizontal Deflection Output Applications (with Damper Diode) Features · Fast switching speed. · Especially suited for use in high-definition CRT display (VCC=12 to 24V). · Wide ASO. Package Dimensions unit:mm 2010C [2SC3176] Specifications JEDEC : TO-220AB EIAJ : SC46 1 : Base 2 : Collector 3 : Emitter Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE(sat) VCB=200V, IE=0 VEB=6V, IC=0 VCE=1V, IC=1A VCE=1V, IC=5A VCE=10V, IC=0.5A IC=5A, IB=0.65A IC=5A, IB=0.65A Ratings 400 200 6 7 12 4 50 150 –55 to +150 Unit V V V A A A W ˚C ˚C Ratings min typ 15 8 10 40 max 100 400 40 1 1.3 Unit µA mA MHz V V Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonabl.


2005-03-22 : 12CWQ10FN    12H3020-2    12H3040-2    12TQ045S    MI31T    MI31TA    MI32T    MI32T-L    MI32TA    MI33T   


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