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2SC3153 Datasheet

Part Number 2SC3153
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SC3153 Datasheet2SC3153 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage .

  2SC3153   2SC3153






Part Number 2SC3153
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SC3153 Datasheet2SC3153 Datasheet (PDF)

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 900V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·800V/6A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Coll.

  2SC3153   2SC3153







Part Number 2SC3153
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet 2SC3153 Datasheet2SC3153 Datasheet (PDF)

Ordering number:EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3153] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage.

  2SC3153   2SC3153







NPN Transistor

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 20 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3153 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3153 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.4A; VCE= 5V hFE-2 DC Current Gain IC= 2A; VCE= 5V fT Current-Gain—Band.


2020-09-19 : 2SC3060    2SC3061    2SC2616    2SC2612    2SC2594    2SC2611    2SC2582    2SC2581    2SC2579    2SC2580   


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