2SC3125

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3125 2SC3125 TV Final Picture IF Amplifier Applications Unit: mm · Good linearity of fT Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 4 50 25 150 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter Saturation voltage Base-emitter Collector output capacitance Collector-base time constant Transition frequency Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) Cob Cc･rbb’ fT VCB = 30 V, IE = 0 VEB = 3 V, IC = 0 IC = 10 mA, IB = 0 VCE = 10 V, IC = 10 mA IC = 15 mA, IB = 1.5 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 1 mA, f = 30 MHz VCE = 10 V, IC = 10 mA Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 25 ¾ ¾ V 20 70 200 ¾ ¾ 0.2 V ¾ ¾ 1.5 ¾ 1.1 1.6 pF ¾ ¾ 25 ps 250 600 ¾ MHz Marking 1 2003-03-19 2SC3125 2 2003-03-19 2SC3125 3 2003-03-19 2SC3125 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or ...